| PART |
Description |
Maker |
| GP801DCS18 |
Chopper Switch Low VCESAT IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| IXGN60N60 |
Ultra-Low VCE(sat) IGBT
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
IXYS[IXYS Corporation]
|
| PBSS2540M PBSS2540M315 |
40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| IXGH41N60 41N60 |
Ultra-Low VCE(sat) IGBT
|
IXYS[IXYS Corporation]
|
| IXGT31N60 IXGH31N60 |
Ultra-Low VCE(sat) IGBT
|
IXYS[IXYS Corporation]
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT
|
IXYS[IXYS Corporation]
|
| IXGN400N30A3 |
Ultra-Low-Vsat PT IGBT for up to 10kHz Switching
|
IXYS Corporation
|
| IRG7PH35UD1-EP |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
|
International Rectifier
|
| PBSS4520X PBSS4520X-15 |
20 V, 5 A NPN low VCEsat (BISS) transistor 20伏，5安NPN型低饱和压降（BISS）晶体管
NPN low VCEsat (BISS) transistor 20 V, 5 A
|
NXP Semiconductors N.V.
|
| GA150TS60U |
HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT
|
International Rectifier
Integrated Circuit Systems
|
| GA200TS60U |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
|
IRF[International Rectifier]
|
| SGW6N60UFD SGW6N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
